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| BC327 SERIES PNP GENERAL PURPOSE TRANSISTORS 5 VOLTAGE FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = -800mA 45 POWER 625mW MECHANICAL DATA Case: TO-92 Terminals: Solderable per MIL-STD-202, Method 208 Device Marking: BC327-16: 7A BC327-25: 7B BC327-40: 7C 2 BASE COLLECTOR 1 1 2 3 3 EMITTER TO-92 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Value UNIT Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range VCE0 VCB0 VEB0 IC PTOT TJ , TSTG -45 -50 -5.0 -800 625 -55 to 150 V V V mA mW THERMAL CHARACTERISTICS PARAMETER SYMBOL Value UNIT Thermal Resistance , Junction to Ambient (Note 1) RJ A 200 /W Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector - Emitter Breakdown Voltage (IC=-10mA, IB=0) Collector - Emitter Breakdown Voltage (VEB=0V, IC=-100uA) Emitter - Base Breakdown Voltage (IE=-10uA, IC=0) Emitter-Base Cutoff Current (VEB=-4V) Collector-Base Cutoff Current (VCB=-30V, IE=0) Collector Cutoff Current (VCE=-45V, VBE=0) DC Current Gain (IC=-100mA,VCE=-1V) BC337-16 BC337-25 BC337-40 (IC=-300mA, VCE=-1V) Collector - Emitter Saturation Voltage (IC=-500mA, IB=-50mA) Base - Emitter Voltage (IC=-300mA, VCE=-1.0V) Collector - Base Capacitance (VCB=-10V, IE=0, f=1MHz) Current Gain - Bandwidth Product (IC=-10mA, VCE=-5V, f=100MHz) V(BR)CE0 V(BR)CES V(BR)EB0 IEBO ICBO ICES -45 -50 -5.0 100 160 5.0 210 -100 -100 -100 250 400 630 -0.7 -1.2 - V V V nA nA nA hFE 250 40 - VCE(SAT) VBE(ON) CCBO fT - V V pF MHz ELECTRICAL CHARACTERISTICS CURVES 1000 1000 TJ = 150C TJ = 150C TJ = 25C hFE 100 TJ = 100C hFE TJ = 25C 100 TJ = 100C V CE = 1V 10 0.01 0.1 1 10 100 1000 10 0.01 0.1 V CE = 1V 1 10 100 1000 Colle ctor Cur r e nt, IC (m A) Colle cto r Cur r e nt, IC (m A) Fig. 1. BC337-16 Typical hFE vs. IC 1000 TJ = 150C Fig. 2. BC337-25 Typical hFE vs. IC 100 CIB (EB) Capacitance, C (pF TJ = 25C hFE 100 TJ = 100C 10 COB (EB) V CE = 1V 10 0.01 1 0.1 1 10 100 1000 0.1 1 10 100 Colle ctor Curre nt, IC (m A) Reverse Voltage, VR (V) Fig. 3. BC337-40 Typical hFE vs. IC Fig. 4. Typical Capacitances TO-92 PACKAGE OUTLINE TO-92 ORDER INFORMATION BC327-xx B - Bulk 5,000 per box BC327-xx T/R - Tape and Reel, 2,000 per reel BC327-xx A/B - Ammo Pack, 2,000 Per Ammo Pack Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. |
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